Recently, significantly raised interests have emerged for the 2 µm waveband as an extended new window for fiber optic communication. Much research progress has been made on the photonic integrated circuits for the 2 µm waveband, especially on the CMOS-compatible silicon-on-insulator wafer. In this work, a silicon integrated microring modulator (MRM) with record high-speed performances at the 2 µm waveband was demonstrated. An L-shaped PN junction was specially designed for 2 µm to achieve a high modulation efficiency with VπL of 0.85V·cm. The measured 3 dB bandwidth is 18 GHz, supporting up to 50 Gbps signaling at 2 µm. Additionally, optical bistability induced by the thermo-optical effect and nonlinear effects was analyzed theoretically and observed experimentally in the 2 µm MRM for the first time to our knowledge. Nonlinear coupled mode theory and the Runge–Kutta method were used to simulate the behaviors of bistability in the 2 µm MRM. The simulation and experimental results indicate that, when the MRM is launched by a high optical power, the distorted resonant spectrum under an optical bistable state deteriorates the modulation efficiency and signal performances. This work breaks the record of high-speed silicon MRM at 2 µm, drawing a promising prospect for the silicon photonic integration and high-speed interconnection at the 2 µm waveband, and it provides the referenceable analysis of optical bistability, which guides the design and experimental investigation of 2 µm MRM.

Optical signaling without a high voltage driver for electric-optic modulation is in high demand to reduce power consumption, packaging complexity, and cost. In this work, we propose and experimentally demonstrate a silicon mode-loop Mach–Zehnder modulator (ML-MZM) with record-high modulation efficiency. We used a mode-loop structure to recycle light twice in the phase shifter. With an L-shaped PN junction, a comparably large overlap between the PN junction and optical modes of both TE0 and TE1 was achieved to lower the driving voltage or decrease the photonic device size. Proof-of-concept high-efficiency modulation with low VπL of 0.37V·cm was obtained. Subvoltage Vπ can be realized with a millimeter’s length phase shifter by this scheme, which makes the realization of CMOS-compatible driverless modulation highly possible. 40 Gb/s signaling with a bit error rate below the 7% forward-error-correction threshold was then demonstrated with the fabricated ML-MZM, indicating great potential for high-speed optical communication.

To overcome the capacity crunch of optical communications based on the traditional single-mode fiber (SMF), different modes in a few-mode fiber (FMF) can be employed for mode division multiplexing (MDM). MDM can also be extended to photonic integration for obtaining improved density and efficiency, as well as interconnection capacity. Therefore, MDM becomes the most promising method for maintaining the trend of “Moore’s law” in photonic integration and optical fiber transmission. In this tutorial, we provide a review of MDM works and cutting-edge progresses from photonic integration to optical fiber transmission, including our recent works of MDM low-noise amplification, FMF fiber design, MDM Si photonic devices, and so on. Research and application challenges of MDM for optical communications regarding long-haul transmission and short reach interconnection are discussed as well. The content is expected to be of important value for both academic researchers and industrial engineers during the development of next-generation optical communication systems, from photonic chips to fiber links.

Recently, 2-μm wave band has gained increasing interest due to its potential application for next-generation optical communication. But the development of 2-μm optical communications is substantially hampered by the modulation speed due to the device bandwidth constraints. Thus, a high-speed modulator is highly demanded at 2 μm. Motivated by this prospect, we demonstrate a high-speed silicon Mach–Zehnder modulator for a 2-μm wave band. The device is configured as a single-ended push–pull structure with waveguide electrorefraction via the free carrier plasma effect. The modulator was fabricated via a multiproject wafer shuttle run at a commercial silicon photonic foundry. The modulation efficiency of a single arm is measured to be 1.6V·cm. The high-speed characterization is also performed, and the modulation speed can reach 80 Gbit/s with 4-level pulse amplitude modulation (PAM-4) formats.

We report a low-fabrication-complexity and wideband fiber lens, which is formed by fiber facet etching and filling high refractive index UV adhesive. The optical field can be significantly shrunk by the facet lens so as to obtain improved optical coupling. Numerical simulations were carried out for different coupling conditions, on both fundamental mode and high-order mode, for a nine-mode fiber. The fundamental mode area can be reduced from 152.17 to 12.57μm2, and the coupling loss between the fiber lens and a photonic waveguide can be reduced to -2.9dB with over 1000 nm 3 dB bandwidth.

In this work, on-chip chalcogenide glass photonic integrations with several fundamental photonic building blocks are designed and fabricated based on the As2S3 platform for improved 2 μm optical interconnection, achieving a broadened wavelength bandwidth and improved fabrication tolerance. A 600 nm thick As2S3 strip waveguide has low propagation loss of 1.447 dB/cm at 2 μm. Broadband vertical coupling is realized by a grating coupler with 4.3 dB coupling loss. A Bragg grating filter, power splitter, Mach–Zander interferometer, and mode converter for on-chip mode division multiplexing (MDM) are also reported at 2 μm with reliable performances. Finally, a record high MDM optical interconnection capacity of 3×80Gbps at 2 μm is experimentally demonstrated based on the proposed As2S3 chip, drawing promising prospects for future photonic integration and high-speed interconnection at the 2 μm waveband.